Basics of Field Effect Transistors and Technology Scaling

Course
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English
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28 h
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  • Free Access
  • Fee-based Certificate
More info
  • 7 Sequences
  • Intermediate Level
  • Subtitles in Chinese

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Course details

Syllabus

Week 1: MOS capacitor charges and capacitances
Introduction to the MOS capacitor structures, its charge and capacitance characteristics

Week 2: Charge coupled device, CMOS active-pixel sensor and MOS capacitor with a source
The operation principle of charge coupled devices, CMOS active pixel sensor for digital camera applications. The effect of adding a source to the MOS capacitor.

Week 3: Classical MOSFET I-V characteristics
Derivation of the classical MOSFET equations and the subthreshold characteristics.

Week 4: Mobility degradation and carrier velocity saturation
Correction to the classical pinchoff model by including the effect of mobility degradation and carrier velocity saturation.

Week 5: CMOS device scaling and short channel MOSFET
The effect of transistor scaling, short channel effects and the problems of small transistor design.

Week 6: Non-traditional nano-CMOS transistors
Introduction to the state-of-the-art transistors structure including SOI technology, FinFET, multi-gate MOSFET, tunnelling transistor and transistors based on 2-D materials.

Week 7: Final Exam

Instructors

Mansun Chan
Chair Professor, Department of Electronic and Computer Engineering
The Hong Kong University of Science and Technology

Editor

Hong Kong University of Science and Technology

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